G Skill Intl F5-5600J4040C16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

G Skill Intl F5-5600J4040C16G 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

总分

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

差异规格评论

差异

G Skill Intl F5-5600J4040C16G 16GB

需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 37% 更低的延时
更快的读取速度，GB/s

14.9 10

测试中的平均数值
更快的写入速度，GB/s

13.5 7.9

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

报告一个错误

规格

完整的技术规格清单

G Skill Intl F5-5600J4040C16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

22 35
读取速度，GB/s

14.9 10.0
写入速度，GB/s

13.5 7.9
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3679 2200

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-004.A00LF 4GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Samsung M378A2K43DB1-CVF 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology BL8G30C15U4R.M8FE 8GB

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DSL Memory D4SS1G082SH21A-B 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BL8G32C16U4W.M8FE1 8GB

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