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G Skill Intl F5-5600J4040C16G 16GB
Samsung M393A1G43DB1-CRC 8GB

G Skill Intl F5-5600J4040C16G 16GB vs Samsung M393A1G43DB1-CRC 8GB

总分
star star star star star
G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分
star star star star star
Samsung M393A1G43DB1-CRC 8GB

Samsung M393A1G43DB1-CRC 8GB

差异 规格 评论

差异

G Skill Intl F5-5600J4040C16G 16GB 需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 32
    左右 31% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 10.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.5
    测试中的平均数值
Samsung M393A1G43DB1-CRC 8GB 需要考虑的原因
Samsung M393A1G43DB1-CRC 8GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F5-5600J4040C16G 16GB
Samsung M393A1G43DB1-CRC 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 32
  • 读取速度，GB/s
    14.9 left arrow 10.8
  • 写入速度，GB/s
    13.5 left arrow 8.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3679 left arrow 2349

G Skill Intl F5-5600J4040C16G 16GB RAM的比较

Kingston 99U5701-036.A00G 16GB
Kingston 9905701-132.A00G 16GB

Samsung M393A1G43DB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
Crucial Technology BLS8G4D240FSEK.8FBD 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3200C16-16GVS 16GB
G Skill Intl F4-3200C16-16GVS 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-4400C19-16GVK 16GB
G Skill Intl F4-4400C19-16GVK 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Team Group Inc. DDR4 2800 8GB
Team Group Inc. DDR4 2800 8GB
内存RAM