RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
G Skill Intl F5-5600J4040C16G 16GB
Teikon TMA851U6CJR6N-VKSC 4GB

G Skill Intl F5-5600J4040C16G 16GB vs Teikon TMA851U6CJR6N-VKSC 4GB

总分
star star star star star
G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分
star star star star star
Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

差异 规格 评论

差异

G Skill Intl F5-5600J4040C16G 16GB 需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 62
    左右 65% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 6.0
    测试中的平均数值
Teikon TMA851U6CJR6N-VKSC 4GB 需要考虑的原因
Teikon TMA851U6CJR6N-VKSC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 14.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
G Skill Intl F5-5600J4040C16G 16GB
Teikon TMA851U6CJR6N-VKSC 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 62
  • 读取速度，GB/s
    14.9 left arrow 16.1
  • 写入速度，GB/s
    13.5 left arrow 6.0
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3679 left arrow 1586

G Skill Intl F5-5600J4040C16G 16GB RAM的比较

Kingston 99U5701-036.A00G 16GB
Kingston 9905701-132.A00G 16GB

Teikon TMA851U6CJR6N-VKSC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Transcend Information TS1GLH64V4B 8GB
Transcend Information TS1GLH64V4B 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Kingston 9905622-025.A00G 4GB
Kingston 9905622-025.A00G 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2666C18-4GFX 4GB
G Skill Intl F4-2666C18-4GFX 4GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMD8GX4M2B3466C18 4GB
Corsair CMD8GX4M2B3466C18 4GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston KC5N22-MIE 16GB
Kingston KC5N22-MIE 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
AMD R948G2806U2S 8GB
AMD R948G2806U2S 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Kingston ACR256X64D3U1333C9 2GB
Kingston ACR256X64D3U1333C9 2GB
Kingston 9905711-015.A00G 4GB
Kingston 9905711-015.A00G 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J641GU42J5213ND 8GB
Avant Technology J641GU42J5213ND 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM