G Skill Intl F5-6400J3239G16G 16GB vs Corsair CMK64GX4M8X3600C18 8GB

总分

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMK64GX4M8X3600C18 8GB

差异规格评论

差异

G Skill Intl F5-6400J3239G16G 16GB

需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时
更快的读取速度，GB/s

17.8 17.7

测试中的平均数值
更快的写入速度，GB/s

15.7 15.4

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Corsair CMK64GX4M8X3600C18 8GB

需要考虑的原因
Corsair CMK64GX4M8X3600C18 8GB

报告一个错误

规格

完整的技术规格清单

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK64GX4M8X3600C18 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

17.8 17.7
写入速度，GB/s

15.7 15.4
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3867 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology C 8GB

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Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

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G Skill Intl F4-3200C22-8GRS 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

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Kingston KHX2400C14D4/16G 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB