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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4DFD832A.C16FN 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT16G4DFD832A.C16FN 16GB

总分
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 15.3
    测试中的平均数值
Crucial Technology CT16G4DFD832A.C16FN 16GB 需要考虑的原因
Crucial Technology CT16G4DFD832A.C16FN 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 77
    左右 -141% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 32
  • 读取速度，GB/s
    3,405.2 left arrow 17.6
  • 写入速度，GB/s
    2,622.0 left arrow 15.3
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3516

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT16G4DFD832A.C16FN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston ACR256X64D3S1333C9 2GB
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G Skill Intl F4-3000C15-8GVS 8GB
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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
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Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
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Kingston KHX3600C17D4/8GX 8GB
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Samsung M393B5270CH0-CH9 4GB
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V-GEN D4H16GS24A8 16GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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Kingston 99U5469-045.A00LF 4GB
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SK Hynix HMAA2GU6CJR8N-XN 16GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
内存RAM
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Corsair CMX8GX3M2A2000C9 4GB
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Elpida EBJ40UG8EFU0-GN-F 4GB
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内存RAM
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Micron Technology 9ASF1G72AZ-2G3B1 8GB
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内存RAM
Kingston KHX2400C11D3/4GX 4GB
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G Skill Intl F4-4000C19-4GTZ 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
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Corsair CMK32GX4M4A2666C15 8GB
Corsair CMK32GX4M4A2666C15 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
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Samsung M378B5273EB0-CK0 4GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
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Crucial Technology CT4G4DFS8213.8FA11?? 4GB
内存RAM