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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs SK Hynix HMA82GS6DJR8N-WM 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分
star star star star star
SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 43
    左右 33% 更低的延时
SK Hynix HMA82GS6DJR8N-WM 16GB 需要考虑的原因
SK Hynix HMA82GS6DJR8N-WM 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 43
  • 读取速度，GB/s
    13.4 left arrow 15.0
  • 写入速度，GB/s
    9.0 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 2794

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB

SK Hynix HMA82GS6DJR8N-WM 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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SK Hynix HYMP512S64CP8-Y5 1GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
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