G Skill Intl F5-6400J3239G16G 16GB vs G Skill Intl F4-3000C16-16GSXFB 16GB

总分

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

差异规格评论

差异

G Skill Intl F5-6400J3239G16G 16GB

需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 35% 更低的延时
更快的读取速度，GB/s

17.8 15.6

测试中的平均数值
更快的写入速度，GB/s

15.7 12.1

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3000C16-16GSXFB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GSXFB 16GB

报告一个错误

规格

完整的技术规格清单

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

26 40
读取速度，GB/s

17.8 15.6
写入速度，GB/s

15.7 12.1
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3867 3034

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Apacer Technology 78.C1GMM.AUW0C 8GB

Apacer Technology 78.C1GMM.AUW0C 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-3733C17-16GTZR 16GB

G Skill Intl F4-3733C17-16GTZR 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Corsair CMW64GX4M4E3200C16 16GB

Corsair CMW64GX4M4E3200C16 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16