G Skill Intl F5-6400J3239G16G 16GB vs Patriot Memory (PDP Systems) 3200 C16 Series 8GB

总分

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

差异规格评论

差异

G Skill Intl F5-6400J3239G16G 16GB

需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时
更快的写入速度，GB/s

15.7 14.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3200 C16 Series 8GB

报告一个错误

更快的读取速度，GB/s

18 17.8

测试中的平均数值

规格

完整的技术规格清单

G Skill Intl F5-6400J3239G16G 16GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

17.8 18.0
写入速度，GB/s

15.7 14.3
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3867 3466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston HX421C14FB/4 4GB

Kingston HX421C14FB/4 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Crucial Technology BL16G30C15U4B.16FE 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Samsung T471A1K43CB1-CRC 8GB

Samsung T471A1K43CB1-CRC 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Apacer Technology GD2.1527WE.001 8GB

Apacer Technology GD2.1527WE.001 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB