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G Skill Intl F5-6400J3239G16G 16GB
Samsung M393A2K43CB1-CRC 16GB

G Skill Intl F5-6400J3239G16G 16GB vs Samsung M393A2K43CB1-CRC 16GB

总分
star star star star star
G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分
star star star star star
Samsung M393A2K43CB1-CRC 16GB

Samsung M393A2K43CB1-CRC 16GB

差异 规格 评论

差异

G Skill Intl F5-6400J3239G16G 16GB 需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 8.0
    测试中的平均数值
Samsung M393A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M393A2K43CB1-CRC 16GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F5-6400J3239G16G 16GB
Samsung M393A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 33
  • 读取速度，GB/s
    17.8 left arrow 11.0
  • 写入速度，GB/s
    15.7 left arrow 8.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3867 left arrow 2200

G Skill Intl F5-6400J3239G16G 16GB RAM的比较

Corsair CMK16GX4M2K4266C16 8GB
Kingston 9905783-025.A01G 16GB

Samsung M393A2K43CB1-CRC 16GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M393A2K43CB1-CRC 16GB
Samsung M393A2K43CB1-CRC 16GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CM4B16G1L3200K18K2 16GB
Corsair CM4B16G1L3200K18K2 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
SK Hynix HMA82GU7MFR8N-TF 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CMSX4GX4M1A2400C16 4GB
Corsair CMSX4GX4M1A2400C16 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4000C17-16GTZRB 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
G Skill Intl F4-3600C19-16GVRB 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F4-3000C16-8GSXKB 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905711-002.A00G 4GB
Kingston 9905711-002.A00G 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2800C16-8GVR 8GB
G Skill Intl F4-2800C16-8GVR 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
G Skill Intl F4-4000C16-16GVK 16GB
G Skill Intl F4-4000C16-16GVK 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM