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Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AD4S3200316G22-BHYD 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 66
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 13.2
    测试中的平均数值
A-DATA Technology AD4S3200316G22-BHYD 16GB 需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 66
  • 读取速度，GB/s
    4,577.1 left arrow 13.9
  • 写入速度，GB/s
    2,066.5 left arrow 13.2
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2429

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

A-DATA Technology AD4S3200316G22-BHYD 16GB RAM的比较

A-DATA Technology DDR4 3000 2OZ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA84GL7AMR4N-UH 32GB
SK Hynix HMA84GL7AMR4N-UH 32GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3466C16-8GVK 8GB
G Skill Intl F4-3466C16-8GVK 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
内存RAM
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMW32GX4M4C3600C18 8GB
Corsair CMW32GX4M4C3600C18 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM