Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology BLS8G4D240FSC.M16FAD 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,066.5 13.3

测试中的平均数值

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSC.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 49

左右 -123% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 22
读取速度，GB/s

4,577.1 16.8
写入速度，GB/s

2,066.5 13.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

737 3097

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16G

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMT32GX4M4C3600C18 8GB

Corsair CMT32GX4M4C3600C18 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB

Golden Empire CL34-38-38 D5-5200 16GB

Golden Empire CL34-38-38 D5-5200 16GB

SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Apacer Technology 78.CAGPP.ARC0B 8GB

Apacer Technology 78.CAGPP.ARC0B 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB