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Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Crucial Technology CT8G4SFS8213.C8FBD1 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11
    测试中的平均数值
Crucial Technology CT8G4SFS8213.C8FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 49
    左右 -75% 更低的延时
  • 更快的写入速度，GB/s
    6.1 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 28
  • 读取速度，GB/s
    4,577.1 left arrow 11.0
  • 写入速度，GB/s
    2,066.5 left arrow 6.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 1775

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M4 70T5663QZ3-CF7 2GB
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Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
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SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CM4X16GE2666C16K8 16GB
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内存RAM
Kingston 9905403-090.A01LF 4GB
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内存RAM
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AMD R5316G1609U2K 8GB
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内存RAM
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