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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2133C15-8GSQ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-2133C15-8GSQ 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-2133C15-8GSQ 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 12.0
    测试中的平均数值
G Skill Intl F4-2133C15-8GSQ 8GB 需要考虑的原因
G Skill Intl F4-2133C15-8GSQ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 49
    左右 -104% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2133C15-8GSQ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 24
  • 读取速度，GB/s
    4,577.1 left arrow 15.7
  • 写入速度，GB/s
    2,066.5 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2618

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-2133C15-8GSQ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Samsung M378B5273DH0-CH9 4GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4X4GF3000C15K4 4GB
Corsair CM4X4GF3000C15K4 4GB
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AMD R5316G1609U2K 8GB
Corsair CMD32GX4M4C3466C16W 8GB
Corsair CMD32GX4M4C3466C16W 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
G Skill Intl F4-3300C16-4GRRD 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
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Kingston KF3200C16D4/8GX 8GB
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Corsair CMWX8GD3600C18W2D 8GB
内存RAM
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Kingston 9905471-076.A00LF 8GB
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Crucial Technology BLS16G4D30AESB.M16FE 16GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Ramos Technology RMB4GB584CA3-13HC 4GB
Ramos Technology RMB4GB584CA3-13HC 4GB
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Ramos Technology RMB4GB58BCA3-13HC 4GB
内存RAM
Kingston 99U5471-002.A00LF 2GB
Kingston 99U5471-002.A00LF 2GB
Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
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Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM