Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-2666C15-4GRR 4GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 15.3

测试中的平均数值
更快的写入速度，GB/s

2,066.5 11.7

测试中的平均数值

G Skill Intl F4-2666C15-4GRR 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GRR 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 49

左右 -36% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-2666C15-4GRR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 36
读取速度，GB/s

4,577.1 15.3
写入速度，GB/s

2,066.5 11.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 2935

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMAA4GU6AJR8N-XN 32GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2400C15-16GIS 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

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A-DATA Technology DDR4 2400 16GB

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Crucial Technology BLS16G4D240FSE.16FD 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F4-4000C14-8GTZR 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3200C16-32GTZN 32GB

G Skill Intl F4-3200C16-32GTZN 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Corsair CMD32GX4M4A2400C12 8GB

Corsair CMD32GX4M4A2400C12 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

Patriot Memory (PDP Systems) PSD21G800816 1GB

Patriot Memory (PDP Systems) PSD21G800816 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB