Ramos Technology RMB4GB58BCA3-13HC 4GB vs Micron Technology 9905625-004.A03LF 8GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时

Micron Technology 9905625-004.A03LF 8GB

需要考虑的原因
Micron Technology 9905625-004.A03LF 8GB

报告一个错误

更快的读取速度，GB/s

17.4 11.6

测试中的平均数值
更快的写入速度，GB/s

11.7 5.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 9905625-004.A03LF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 26
读取速度，GB/s

11.6 17.4
写入速度，GB/s

5.6 11.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1751 2806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

SK Hynix DDR2 800 2G 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

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Corsair CML16GX3M2A1600C10 8GB

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