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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C18-8GTRG 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-3600C18-8GTRG 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 15.5
    测试中的平均数值
G Skill Intl F4-3600C18-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-3600C18-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 49
    左右 -81% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C18-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 27
  • 读取速度，GB/s
    4,577.1 left arrow 17.6
  • 写入速度，GB/s
    2,066.5 left arrow 15.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 3683

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-3600C18-8GTRG 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Samsung M386A4G40DM0-CPB 32GB
Samsung M386A4G40DM0-CPB 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMK8GX4M2B3000C15 4GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Corsair CMK8GX4M2A2400C14 4GB
Corsair CMK8GX4M2A2400C14 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Samsung M471A2K43CBCBCRC 16GB
Samsung M471A2K43CBCBCRC 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston HP24D4U7S8MBP-8 8GB
Kingston HP24D4U7S8MBP-8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Avant Technology W642GU42J9266N8 16GB
Avant Technology W642GU42J9266N8 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMT16GX4M2C3466C16 8GB
Corsair CMT16GX4M2C3466C16 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C17-16GTZRB 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
内存RAM