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Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Golden Empire CL14-16-16 D4-2400 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 12.6
    测试中的平均数值
Golden Empire CL14-16-16 D4-2400 16GB 需要考虑的原因
Golden Empire CL14-16-16 D4-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 49
    左右 -75% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire CL14-16-16 D4-2400 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 28
  • 读取速度，GB/s
    4,577.1 left arrow 16.5
  • 写入速度，GB/s
    2,066.5 left arrow 12.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2903

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Golden Empire CL14-16-16 D4-2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-014.A00G 8GB
Kingston 9905702-014.A00G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Maxsun MSD44G24Q0 4GB
Maxsun MSD44G24Q0 4GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
内存RAM