Golden Empire 1GB DDR2 800 CAS=4 1GB vs Kingston LV32D4S2S8HD-8 8GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值
更快的写入速度，GB/s

2,066.5 12.0

测试中的平均数值

Kingston LV32D4S2S8HD-8 8GB

需要考虑的原因
Kingston LV32D4S2S8HD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 49

左右 -69% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston LV32D4S2S8HD-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 29
读取速度，GB/s

4,577.1 16.2
写入速度，GB/s

2,066.5 12.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

737 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M378A5244CB0-CRC 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology CT8G4SFS824A.M8FD 8GB

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F4-3333C16-8GVK 8GB

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Kingston HX424C15FB/16 16GB

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G Skill Intl F4-3333C16-8GTZ 8GB

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Kingston ACR16D3LU1KNG/4G 4GB

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Essencore Limited KD48GU881-26N190A 8GB

Essencore Limited KD48GU881-26N190A 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB