Samsung M471B5273CH0-CH9 4GB vs Crucial Technology CT8G4DFS8213.M8FA 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Crucial Technology CT8G4DFS8213.M8FA 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.M8FA 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 -60% 更低的延时
更快的读取速度，GB/s

16.1 8.9

测试中的平均数值
更快的写入速度，GB/s

11.1 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 30
读取速度，GB/s

8.9 16.1
写入速度，GB/s

5.9 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited IM48GU48N21-FFFHM 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Apacer Technology 78.C1GMM.BAC0B 8GB

Apacer Technology 78.C1GMM.BAC0B 8GB