Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 36ADS2G72PZ-2G1A1 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

低于PassMark测试中的延时，ns

49 94

左右 48% 更低的延时

Micron Technology 36ADS2G72PZ-2G1A1 16GB

需要考虑的原因
Micron Technology 36ADS2G72PZ-2G1A1 16GB

报告一个错误

更快的读取速度，GB/s

5.6 4

测试中的平均数值
更快的写入速度，GB/s

4.9 2,066.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 94
读取速度，GB/s

4,577.1 5.6
写入速度，GB/s

2,066.5 4.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

737 1334

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386B4G70DM0-CMA4 32GB

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Patriot Memory (PDP Systems) 4000 C20 Series 8GB

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Samsung M4 70T5663QZ3-CF7 2GB

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