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Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology 36ASF4G72PZ-2G1B1 32GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G1B1 32GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 11.1
    测试中的平均数值
Micron Technology 36ASF4G72PZ-2G1B1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1B1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 49
    左右 -53% 更低的延时
  • 更快的写入速度，GB/s
    6.9 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 32
  • 读取速度，GB/s
    4,577.1 left arrow 11.1
  • 写入速度，GB/s
    2,066.5 left arrow 6.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2238

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905701-141.A00G 16GB
Kingston 9905701-141.A00G 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-2133C15-8GSQ 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Gloway International (HK) STK4U2400D17161C 16GB
Gloway International (HK) STK4U2400D17161C 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMK16GX4M4C3000C16 4GB
Corsair CMK16GX4M4C3000C16 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMD16GX4M4B3200C16 4GB
Corsair CMD16GX4M4B3200C16 4GB
内存RAM