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Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A2K43DB3-CWE 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Samsung M393A2K43DB3-CWE 16GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 53
    左右 8% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 10.3
    测试中的平均数值
Samsung M393A2K43DB3-CWE 16GB 需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.7 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A2K43DB3-CWE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 53
  • 读取速度，GB/s
    4,577.1 left arrow 10.3
  • 写入速度，GB/s
    2,066.5 left arrow 7.7
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2356

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Samsung M393A2K43DB3-CWE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK32GX4M4Z2933C16 8GB
Corsair CMK32GX4M4Z2933C16 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C17-16GTZR 16GB
G Skill Intl F4-3600C17-16GTZR 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
King Tiger Technology TMKU8G868-240U 8GB
King Tiger Technology TMKU8G868-240U 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
Corsair CMX32GX3M4A1600C11 8GB
Corsair CMX32GX3M4A1600C11 8GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Crucial Technology BL16G32C16S4B.8FB 16GB
内存RAM