Hexon Technology Pte Ltd HEXON 1GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

低于PassMark测试中的延时，ns

62 63

左右 2% 更低的延时
更快的读取速度，GB/s

3 16.6

测试中的平均数值

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

报告一个错误

更快的写入速度，GB/s

8.2 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 63
读取速度，GB/s

3,556.6 16.6
写入速度，GB/s

1,843.6 8.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD64GX4M4B3466C16 16GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Kingston 9905402-665.A00LF 4GB

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Samsung V-GeN D4S8GL30A8TX5 8GB

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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

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Crucial Technology CT32G4SFD832A.C16FB 32GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Corsair CMSX64GX4M2A2933C19 32GB

Corsair CMSX64GX4M2A2933C19 32GB

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Kingston KHX3000C15D4/8GX 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F3-14900CL10-8GBZL 8GB

G Skill Intl F3-14900CL10-8GBZL 8GB