Hexon Technology Pte Ltd HEXON 1GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Hexon Technology Pte Ltd HEXON 1GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 18.1

测试中的平均数值

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更快的写入速度，GB/s

14.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

3,556.6 18.1
写入速度，GB/s

1,843.6 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

Samsung M393B2K70CM0-YF8 16GB

Samsung M393B2K70CM0-YF8 16GB

Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

Kingston KHX3466C19D4/8G 8GB

Kingston KHX3466C19D4/8G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

EXCELERAM D4168G8HHSS9CJRB21 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-4000C16-16GVK 16GB

G Skill Intl F4-4000C16-16GVK 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB

Crucial Technology BLT8G4D26AFTA.16FBD 8GB