Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMD16GX4M2B3200C16 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 17.7

测试中的平均数值

Corsair CMD16GX4M2B3200C16 8GB

需要考虑的原因
Corsair CMD16GX4M2B3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 62

左右 -114% 更低的延时
更快的写入速度，GB/s

13.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD16GX4M2B3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 29
读取速度，GB/s

3,556.6 17.7
写入速度，GB/s

1,843.6 13.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 3321

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT32GX4M2D3600C18 16GB

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Samsung M471B5273EB0-CK0 4GB

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AMD R5S38G1601U2S 8GB

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Kingston 9905665-020.A00G 4GB

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Kingston 99U5429-014.A00LF 4GB

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Apacer Technology 76.D305G.D390B 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CM4X8GF2666C18S2 8GB

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Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CM4X8GE2666C16K8 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB