Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Corsair CMD16GX4M2B3200C16 8GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Corsair CMD16GX4M2B3200C16 8GB

需要考虑的原因
Corsair CMD16GX4M2B3200C16 8GB

报告一个错误

更快的读取速度，GB/s

17.7 16.7

测试中的平均数值
更快的写入速度，GB/s

13.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD16GX4M2B3200C16 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

16.7 17.7
写入速度，GB/s

11.8 13.8
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 3321

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA851S6JJR6N-VK 4GB

SK Hynix HMA851S6JJR6N-VK 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-3600C18-32GTZN 32GB

G Skill Intl F4-3600C18-32GTZN 32GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB