RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology J642GU44J2320ND 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avant Technology J642GU44J2320ND 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Avant Technology J642GU44J2320ND 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
31
左右 23% 更低的延时
需要考虑的原因
Avant Technology J642GU44J2320ND 16GB
报告一个错误
更快的读取速度,GB/s
16.6
16
测试中的平均数值
更快的写入速度,GB/s
14.0
12.5
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avant Technology J642GU44J2320ND 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
31
读取速度,GB/s
16.0
16.6
写入速度,GB/s
12.5
14.0
内存带宽,mbps
19200
25600
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2925
3415
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avant Technology J642GU44J2320ND 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Samsung M393B1K70CH0-CH9 8GB
A-DATA Technology DDR4 2666 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology J642GU44J2320ND 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Gloway International (HK) STK4U2400D15082C 8GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston KHX2666C15D4/8G 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Apacer Technology 78.C1GMW.AUC0B 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Samsung M391B1G73QH0-CMA 8GB
A-DATA Technology DDR4 2800 2OZ 4GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
Kingston KVR16N11/8-SP 8GB
Corsair CMSX64GX4M2A3200C22 32GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire CL18-20-20 D4-3600 8GB
‹
›
报告一个错误
×
Bug description
Source link