Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BL16G32C16U4W.M8FB1 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值

Crucial Technology BL16G32C16U4W.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4W.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 62

左右 -94% 更低的延时
更快的写入速度，GB/s

14.6 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 32
读取速度，GB/s

3,556.6 18.7
写入速度，GB/s

1,843.6 14.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 3659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R7416G2400U2S 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BL8G32C16U4BL.8FE 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905713-019.A00G 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB