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Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
比较
Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BLS16G4D240FSC.16FD 16GB
总分
Hexon Technology Pte Ltd HEXON 1GB
总分
Crucial Technology BLS16G4D240FSC.16FD 16GB
差异
规格
评论
差异
需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
更快的读取速度,GB/s
3
17.3
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4D240FSC.16FD 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
62
左右 -121% 更低的延时
更快的写入速度,GB/s
13.4
1,843.6
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
28
读取速度,GB/s
3,556.6
17.3
写入速度,GB/s
1,843.6
13.4
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
542
3332
Hexon Technology Pte Ltd HEXON 1GB RAM的比较
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
Crucial Technology BLS16G4D240FSC.16FD 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD AE34G1601U1 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Heoriady HX2666DT8G-TD 8GB
Nanya Technology NT8GC72B4NB1NK-CG 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C
Kingston 9905702-119.A00G 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905599-026.A00G 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4000C18-8GTZRB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Samsung M471B5673FH0-CF8 2GB
Golden Empire CL19-19-19 D4-2666 4GB
Samsung M471B5173QH0-YK0 4GB
DSL Memory CIR-W4SUSS2408G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX3200C16D4/4GX 4GB
报告一个错误
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