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Nanya Technology NT8GC72B4NB1NK-CG 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Nanya Technology NT8GC72B4NB1NK-CG 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

总分
star star star star star
Nanya Technology NT8GC72B4NB1NK-CG 8GB

Nanya Technology NT8GC72B4NB1NK-CG 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

差异 规格 评论

差异

Nanya Technology NT8GC72B4NB1NK-CG 8GB 需要考虑的原因
Nanya Technology NT8GC72B4NB1NK-CG 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 64
    左右 -88% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 5.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 4.3
    测试中的平均数值

规格

完整的技术规格清单
Nanya Technology NT8GC72B4NB1NK-CG 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    64 left arrow 34
  • 读取速度，GB/s
    5.7 left arrow 9.6
  • 写入速度，GB/s
    4.3 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1317 left arrow 2050

Nanya Technology NT8GC72B4NB1NK-CG 8GB RAM的比较

Nanya Technology NT8GA64D88AX3S-HR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
SK Hynix HMT31GR7EFR4C-H9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Nanya Technology NT8GC72B4NB1NK-CG 8GB
Nanya Technology NT8GC72B4NB1NK-CG 8GB
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内存RAM
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内存RAM
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