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Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Samsung M378B5673FH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 35
    左右 -3% 更低的延时

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    35 left arrow 34
  • 读取速度，GB/s
    14.4 left arrow 9.6
  • 写入速度，GB/s
    9.5 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2050

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB RAM的比较

SK Hynix HMT31GR7EFR4C-H9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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