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Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Samsung M378B5673FH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Overall score
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Differences Specifications Comments

Differences

Samsung M378B5673FH0-CH9 2GB Reasons to consider
Samsung M378B5673FH0-CH9 2GB
Report a bug
  • Faster reading speed, GB/s
    14.4 left arrow 9.6
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 7.6
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 35
    Around -3% lower latency

Specifications

Complete list of technical specifications
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    35 left arrow 34
  • Read speed, GB/s
    14.4 left arrow 9.6
  • Write speed, GB/s
    9.5 left arrow 7.6
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2321 left arrow 2050

Samsung M378B5673FH0-CH9 2GB RAM comparisons

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB RAM comparisons

SK Hynix HMT31GR7EFR4C-H9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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