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Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Samsung M378B5673FH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

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Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673FH0-CH9 2GB Motivi da considerare
Samsung M378B5673FH0-CH9 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    14.4 left arrow 9.6
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    9.5 left arrow 7.6
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    34 left arrow 35
    Intorno -3% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    35 left arrow 34
  • Velocità di lettura, GB/s
    14.4 left arrow 9.6
  • Velocità di scrittura, GB/s
    9.5 left arrow 7.6
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    2321 left arrow 2050

Samsung M378B5673FH0-CH9 2GB Confronto tra le RAM

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB Confronto tra le RAM

SK Hynix HMT31GR7EFR4C-H9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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