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Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology BLS8G4D26BFSE.16FD2 8GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
Crucial Technology BLS8G4D26BFSE.16FD2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 62
    左右 -182% 更低的延时
  • 更快的写入速度，GB/s
    12.2 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 22
  • 读取速度，GB/s
    3,556.6 left arrow 16.5
  • 写入速度，GB/s
    1,843.6 left arrow 12.2
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2809

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA84GL7AMR4N-TF 32GB
SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Mushkin MRA4S293MMMF32G 32GB
Mushkin MRA4S293MMMF32G 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology GD2.1831WS.002 16GB
Apacer Technology GD2.1831WS.002 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
内存RAM
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR64GX4M4A2666C16 16GB
Corsair CMR64GX4M4A2666C16 16GB
内存RAM