Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology CT16G4SFD8266.M16FJ 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值

Crucial Technology CT16G4SFD8266.M16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.M16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 62

左右 -72% 更低的延时
更快的写入速度，GB/s

13.9 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 36
读取速度，GB/s

3,556.6 16.3
写入速度，GB/s

1,843.6 13.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 3068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSO8GX3M1A1333C9 8GB

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Samsung M378A2K43BB1-CPB 16GB

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Kingston 99U5700-014.A00G 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Apacer Technology 78.CAGMR.ARC0B 8GB

Apacer Technology 78.CAGMR.ARC0B 8GB

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Kingston KVT8FP-HYC 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 9905678-110.A00G 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N