Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology CT4G4DFS8213.C8FAD1 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 11.9

测试中的平均数值

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAD1 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 62

左右 -107% 更低的延时
更快的写入速度，GB/s

10.0 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 30
读取速度，GB/s

3,556.6 11.9
写入速度，GB/s

1,843.6 10.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2475

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Samsung V-GeN D4S16GL26A8TL6 16GB

Samsung V-GeN D4S16GL26A8TL6 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Panram International Corporation PUD42400C168GVS 8GB

Panram International Corporation PUD42400C168GVS 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Apacer Technology 78.CAGN4.4020B 8GB

Apacer Technology 78.CAGN4.4020B 8GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3000C15-4GVRB 4GB

G Skill Intl F4-3000C15-4GVRB 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMSX16GX4M2A3000C18 8GB

Corsair CMSX16GX4M2A3000C18 8GB