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Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
比较
Hexon Technology Pte Ltd HEXON 1GB vs Essencore Limited IM4AGU88N26-GIIHA0 16GB
总分
Hexon Technology Pte Ltd HEXON 1GB
总分
Essencore Limited IM4AGU88N26-GIIHA0 16GB
差异
规格
评论
差异
需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
更快的读取速度,GB/s
3
16.4
测试中的平均数值
需要考虑的原因
Essencore Limited IM4AGU88N26-GIIHA0 16GB
报告一个错误
低于PassMark测试中的延时,ns
51
62
左右 -22% 更低的延时
更快的写入速度,GB/s
9.8
1,843.6
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
51
读取速度,GB/s
3,556.6
16.4
写入速度,GB/s
1,843.6
9.8
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
542
2336
Hexon Technology Pte Ltd HEXON 1GB RAM的比较
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4400C17-16GVK 16GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Super Talent F21UB8GS 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
AMD R744G2400U1S-UO 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KCRXJ6-HYJ 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston HP26D4S9S1ME-4 4GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2400C15-4GNT 4GB
AMD R534G1601U1S-UO 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
报告一个错误
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