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Kingston 39P5429-006.AO01 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Kingston 39P5429-006.AO01 2GB vs Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

总分
star star star star star
Kingston 39P5429-006.AO01 2GB

Kingston 39P5429-006.AO01 2GB

总分
star star star star star
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

差异 规格 评论

差异

Kingston 39P5429-006.AO01 2GB 需要考虑的原因
Kingston 39P5429-006.AO01 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 17.1
    测试中的平均数值
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 44
    左右 -22% 更低的延时
  • 更快的写入速度，GB/s
    11.0 left arrow 1,892.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston 39P5429-006.AO01 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 36
  • 读取速度，GB/s
    6,181.5 left arrow 17.1
  • 写入速度，GB/s
    1,892.9 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    851 left arrow 3009

Kingston 39P5429-006.AO01 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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