Samsung M393B1G70QH0-YK0 8GB vs Chun Well Technology Holding Limited D4U0830160B 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Chun Well Technology Holding Limited D4U0830160B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0830160B 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 52

左右 -63% 更低的延时
更快的读取速度，GB/s

17.4 9.8

测试中的平均数值
更快的写入速度，GB/s

12.5 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 32
读取速度，GB/s

9.8 17.4
写入速度，GB/s

8.0 12.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2179 3137

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C15-8GVR 8GB

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Kingston 99U5458-008.A00LF 4GB

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Crucial Technology CB8GU2400.C8JT 8GB

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SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology BLS8G4D240FSCK.8FD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A1K1KBB0-CPB 8GB

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Apacer Technology GD2.1527WT.001 8GB

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Samsung M471B5673FH0-CF8 2GB

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB