Samsung M378A1G43DB0-CPB 8GB vs G Skill Intl F4-3000C16-16GVRB 16GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

G Skill Intl F4-3000C16-16GVRB 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GVRB 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 36

左右 -16% 更低的延时
更快的读取速度，GB/s

16.9 15

测试中的平均数值
更快的写入速度，GB/s

13.2 10.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-3000C16-16GVRB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 31
读取速度，GB/s

15.0 16.9
写入速度，GB/s

10.3 13.2
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 3300

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International (HK) STK4U2400D15082C 8GB

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V-GEN D4R8GL24A8R 8GB

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Essencore Limited KD48GU880-32A160X 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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G Skill Intl F4-3466C16-16GTZ 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Avant Technology J641GU42J9266NL 8GB

Avant Technology J641GU42J9266NL 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Mushkin MR[ABC]4U360JNNM16G 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

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Kingston 9905630-005.A00G 8GB