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Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C14-16GTZN 16GB

Hexon Technology Pte Ltd HEXON 1GB vs G Skill Intl F4-3600C14-16GTZN 16GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 22.3
    测试中的平均数值
G Skill Intl F4-3600C14-16GTZN 16GB 需要考虑的原因
G Skill Intl F4-3600C14-16GTZN 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 62
    左右 -107% 更低的延时
  • 更快的写入速度，GB/s
    16.3 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C14-16GTZN 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 30
  • 读取速度，GB/s
    3,556.6 left arrow 22.3
  • 写入速度，GB/s
    1,843.6 left arrow 16.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 3873

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

G Skill Intl F4-3600C14-16GTZN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3600C14-16GTZN 16GB
G Skill Intl F4-3600C14-16GTZN 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
Ramaxel Technology RMUA5090KB78HAF2133 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
Samsung 16KTF1G64AZ-1G9P1 8GB
Samsung 16KTF1G64AZ-1G9P1 8GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-2133C15-8GRR2 8GB
G Skill Intl F4-2133C15-8GRR2 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Corsair CMK16GX4M4A2800C16 4GB
Corsair CMK16GX4M4A2800C16 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM