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Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
比较
Hexon Technology Pte Ltd HEXON 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
总分
Hexon Technology Pte Ltd HEXON 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
更快的读取速度,GB/s
3
17.5
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
62
左右 -170% 更低的延时
更快的写入速度,GB/s
14.6
1,843.6
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
23
读取速度,GB/s
3,556.6
17.5
写入速度,GB/s
1,843.6
14.6
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
542
3260
Hexon Technology Pte Ltd HEXON 1GB RAM的比较
SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3000C14-16GVKD 16GB
Kingston ACR512X64D3S13C9G 4GB
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Kingston KVR16N11/8-SP 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA41GU6MFR8N-TF 8GB
Samsung M393B5170FH0-CK0 4GB
Samsung M471A1K43DB1-CWE 8GB
报告一个错误
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Bug description
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