Hexon Technology Pte Ltd HEXON 1GB vs Kingston CBD32D4S2D8HD-16 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

Kingston CBD32D4S2D8HD-16 16GB

需要考虑的原因
Kingston CBD32D4S2D8HD-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

61 62

左右 -2% 更低的延时
更快的写入速度，GB/s

14.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Kingston CBD32D4S2D8HD-16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 61
读取速度，GB/s

3,556.6 15.6
写入速度，GB/s

1,843.6 14.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

542 2671

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KM0VW4-MID 8GB

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Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB