Hexon Technology Pte Ltd HEXON 1GB vs Kingston XRMWRN-HYA 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Kingston XRMWRN-HYA 16GB

Kingston XRMWRN-HYA 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Kingston XRMWRN-HYA 16GB

需要考虑的原因
Kingston XRMWRN-HYA 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 62

左右 -88% 更低的延时
更快的写入速度，GB/s

12.0 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Kingston XRMWRN-HYA 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 33
读取速度，GB/s

3,556.6 15.9
写入速度，GB/s

1,843.6 12.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2962

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-4000C18-8GTZKW 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

Kingston XRMWRN-MIE2 16GB

Kingston XRMWRN-MIE2 16GB