Hexon Technology Pte Ltd HEXON 1GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 12

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更快的写入速度，GB/s

9.1 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

3,556.6 12.0
写入速度，GB/s

1,843.6 9.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4K4133C19 8GB

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Kingston ACR16D3LU1KFG/4G 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston KHX2666C16/16G 16GB

Kingston KHX2666C16/16G 16GB

PNY Electronics PNY 2GB

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Crucial Technology BLT8G4D26AFTA.16FAD 8GB

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Kingston 99P5474-014.A00LF 4GB

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Kingston 99U5734-036.A00G 16GB

Kingston 99U5734-036.A00G 16GB