Hexon Technology Pte Ltd HEXON 1GB vs Nanya Technology M471A5143EB1-CRC 4GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

低于PassMark测试中的延时，ns

62 79

左右 22% 更低的延时
更快的读取速度，GB/s

3 14.7

测试中的平均数值

Nanya Technology M471A5143EB1-CRC 4GB

需要考虑的原因
Nanya Technology M471A5143EB1-CRC 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Nanya Technology M471A5143EB1-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 79
读取速度，GB/s

3,556.6 14.7
写入速度，GB/s

1,843.6 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 1710

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD824A.M16FB 16GB

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G Skill Intl F4-3200C14-16GTZ 16GB

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Kingston KHX3200C18D4/8G 8GB

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Avant Technology J641GU42J9266ND 8GB

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Crucial Technology CT51264BA1339.D16F 4GB

Corsair CMT64GX4M2C3600C18 32GB

Corsair CMT64GX4M2C3600C18 32GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Mushkin MR[A/B]4U320LLLM8G 8GB

Mushkin MR[A/B]4U320LLLM8G 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

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Kingston KHX3600C18D4/32GX 32GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB

Patriot Memory (PDP Systems) 4000 C20 Series 8GB