Hexon Technology Pte Ltd HEXON 1GB vs Samsung M378A1K43BB1-CTD 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值

Samsung M378A1K43BB1-CTD 16GB

需要考虑的原因
Samsung M378A1K43BB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 62

左右 -100% 更低的延时
更快的写入速度，GB/s

13.4 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A1K43BB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 31
读取速度，GB/s

3,556.6 17.3
写入速度，GB/s

1,843.6 13.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 2762

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL32G32C16S4B.M16FB1 32GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB