Hexon Technology Pte Ltd HEXON 1GB vs Samsung M393A1G40DB0-B`B 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Samsung M393A1G40DB0-B`B 8GB

Samsung M393A1G40DB0-B`B 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 10.4

测试中的平均数值

Samsung M393A1G40DB0-B`B 8GB

需要考虑的原因
Samsung M393A1G40DB0-B`B 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 62

左右 -88% 更低的延时
更快的写入速度，GB/s

5.5 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Samsung M393A1G40DB0-B`B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 33
读取速度，GB/s

3,556.6 10.4
写入速度，GB/s

1,843.6 5.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 1806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5701-003.A00G 16GB

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Kingston 9905471-076.A00LF 8GB

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G Skill Intl F4-4000C17-16GTRSB 16GB

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Crucial Technology CT4G4DFS8213.C8FBR2 4GB

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Crucial Technology BL8G30C15U4W.M8FE1 8GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB