Hexon Technology Pte Ltd HEXON 1GB vs Samsung M471A2K43DB1-CTD 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值

Samsung M471A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 62

左右 -77% 更低的延时
更快的写入速度，GB/s

10.7 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Samsung M471A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 35
读取速度，GB/s

3,556.6 15.2
写入速度，GB/s

1,843.6 10.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AD5U48008G-B 8GB

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Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston MSI24D4U7D8MH-16 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

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Mushkin 996902 2GB

Mushkin 996902 2GB

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB