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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs A-DATA Technology AO1P32NC8W1-BDZS 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 58
    左右 53% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 16.3
    测试中的平均数值
A-DATA Technology AO1P32NC8W1-BDZS 8GB 需要考虑的原因
A-DATA Technology AO1P32NC8W1-BDZS 8GB
报告一个错误
  • 更快的写入速度，GB/s
    12.2 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2 更高的带宽

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 58
  • 读取速度，GB/s
    16.7 left arrow 16.3
  • 写入速度，GB/s
    11.8 left arrow 12.2
  • 内存带宽，mbps
    21300 left arrow 25600
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2591

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMT128GX4M4C3200C16 32GB
Corsair CMT128GX4M4C3200C16 32GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Kingmax Semiconductor FLGF65F-C8KL9A 4GB
Kingmax Semiconductor FLGF65F-C8KL9A 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston 9965698-001.A00G 16GB
Kingston 9965698-001.A00G 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905678-007.A00G 8GB
Kingston 9905678-007.A00G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology GD2.1527WH.002 8GB
Apacer Technology GD2.1527WH.002 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM